PART |
Description |
Maker |
CY7C1565V18-300BZI |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1243KV18-400BZC CY7C1243KV18-450BZC CY7C1245KV |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress
|
R1QKA3618CBG R1QKA3636CBG R1QLA3636CB R1QLA3618CB |
36-Mbit QDRII SRAM 4-word Burst 36-Mbit QDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
CY7C25652KV18-450BZC CY7C25652KV18-450BZXC CY7C256 |
72-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
CY7C1241V18 CY7C1243V18 CY7C1241V18-300BZC CY7C124 |
36-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的国防评估报告⑩- II SRAM4字突发架构(2.0周期读写延迟
|
Cypress Semiconductor Corp.
|
UPD44165364F5-E60-EQ1 UPD44165084 UPD44165084F5-E4 |
18M-BIT QDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 4-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture
|
Analog Devices, Inc.
|
CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 256K (32K x 8) Static RAM 256 Kb (256K x 1) Static RAM 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
R1Q3A3609BBG-60R R1Q3A3636BBG-60R R1Q3A3636BBG-50R |
36-Mbit QDR垄芒II SRAM 4-word Burst 36-Mbit QDR?II SRAM 4-word Burst
|
Renesas Electronics Corporation http://
|
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|